Publications
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Investigation of Capacitorless Double-Gate Single-Transistor DRAM: With and Without Quantum Well
M. G. Ertosun,
K. C. Saraswat.
IEEE Transactions on Electron Devices.
2010;
57
(3):
608-613
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Novel Capacitorless Single Transistor Charge Trap DRAM (1T CT DRAM) Utilizing Electrons
M. G. Ertosun,
K. Lim, C. Park, J. Oh, P. Kirsch, and K.C. Saraswat.
IEEE Electron Device Letters.
2010;
31
(5)
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Ge MOSFETs and Single Transistor DRAM (Invited Talk)
K. Saraswat,
M. G. Ertosun, D. Kim, T. Krishnamohan, P. McIntyre, Y. Nishi, A. Okyay, J. Park, H. Yu;.
6th International Symposium on Advanced Gate Stack Technology, August 2009 (Invited).
2009
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Novel Memory Devices: Capacitorless Quantum Well 1T DRAM (Invited Talk)
M. G. Ertosun,
Semiconductor Research Corporation (SRC)/National Science Foundation (NSF)/The Singapore Agency for Science, Technology and Research(A*STAR) Forum on 2020 Semiconductor Memory Strategies: Processes, Devices, and Architectures, Singapore, October 2009.
2009
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Novel Single Transistor DRAM Technologies (Invited Talk)
M. G. Ertosun,
Emerging Technologies in Solid State Devices Workshop, Baltimore, December 2009 (Invited)Emerging Technologies in Solid State Devices Workshop, Baltimore, December 2009 (Invited).
2009
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Characteristics Of The Capacitorless Double Gate Quantum Well Single Transistor DRAM
M. G. Ertosun,
K. C. Saraswat.
IEEE International Conference on Simulation of Semiconductor Process and Devices 2009, September 2009.
2009
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A Highly Scalable Capacitorless Double Gate Quantum Well Single Transistor DRAM:1T-QW DRAM
M. G. Ertosun,
P. Kapur; K. C. Saraswat.
IEEE Electron Device Letters.
2008;
29
(12)
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A Nanoscale Vertical Double-Gate Single-Transistor Capacitorless DRAM
M. G. Ertosun,
H. Cho; P. Kapur; K. C. Saraswat;.
IEEE Electron Device Letters.
2008;
29
(6)
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Experimental characterization of single-walled carbon nanotube film-Si Schottky contacts using metal- semiconductor-metal structures
A. Behnam,
J. L. Johnson, Y.Choi, M. Günhan Ertosun, A. K. Okyay, P. Kapur, K. C. Saraswat, and A. Ural,.
Applied Physics Letters.
2008;
92
(24)
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Metal-Semiconductor-Metal (MSM) Photodetectors Based on Single-walled Carbon Nanotube Film- Silicon Schottky Contacts
A. Behnam,
J. L. Johnson, Y. Choi, M. G. Ertosun, Z. Wu, A.G. Rinzler, P. Kapur, K. C. Saraswat, and A. Ural,.
SPIE Photonics West Conference, January 2008..
2008
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Metal-Semiconductor-Metal (MSM) Photodetectors with Single-walled Carbon Nanotube Film Schottky Electrodes on GaAs
A Behnam,
J. Johnson , Y. Choi , L. Noriega , M. G. Ertosun , Z. Wu , A. Rinzler , P. Kapur , K. C. Saraswat , A.Ural.
2008 American Physical Society (APS) March Meeting, New Orleans, LA, March 2008.
2008
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Metal-Semiconductor-Metal photodetectors based on single-walled carbon nanotube film-GaAs Schottky contacts
A. Behnam,
J. L. Johnson, Y. Choi, L. Noriega, M. G. Ertosun, Z. Wu, A. G. Rinzler, P. Kapur, K. C. Saraswat, and A. Ural.
Journal of Applied Physics.
2008;
103
(111)
-
Metal-Semiconductor-Metal (MSM) Photodetectors Based on Single-walled Carbon Nanotube Film-GaAs Schottky Contacts
J. L. Johnson,
J. L. Johnson, A. Behnam, Y. Choi, L. Noriega, M. G. Ertosun, Z. Wu, A.G. Rinzler, P.Kapur, K. C. Saraswat, and A. Ural,.
MRS (Materials Research Society) Fall Meeting.
2007
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Complex signal recovery from multiple fractional Fourier-transform intensities.
Ertosun MG,
Atli H, Ozaktas HM, Barshan B.
Appl Opt.
2005;
44
(23):
4902-8
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Complex signal recovery from two fractional Fourier transform intensities: order and noise dependence
M. G. Ertosun,
H. Atli, H. M. Ozaktas and B. Barshan.
Optics Communications.
2005;
244
(1-6):
61-70
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Complex signal recovery from fractional Fourier transform intensities, IEEE, New Jersey
M. G. Ertosun,
H. Atli, H. M. Ozaktas, B. Barshan.
EE 12th Signal Processing and Communications Applications Conference.
2004:
308311
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